Recent Conference Activity in 5 years
1. H.L. Chang, "Controllable Carbon Based Nanostructured Materials Applied in Nanoelectronics", Graphene & 2D Materials 2015 International Conference & Exhibition Montreal (Canada) 2015, Oct 14-16.
2. H. L. Chang and C. T. Chang. "Self-aligned carbon nanotube formation for CMOS applications ", 2015 International Conference on Diamond and Carbon Materials 6-10 Sep, Bad Homburg, Germany.
3. H. L. Chang as Keynote Speaker, " Exploring the Mechanical and Physical Properties of Si and SiGe Materials : An Advanced Fundamental Study", 2015 ICMSE July 17-19, Qingdao, China.
4. H. L. Chang, C. T. Chang and C. T. Kuo, "Nanostructured Material Formation for Beyond Si Devices", 2015 IEEE International Interconnect Technology Conference 2015, May18-21, Grenoble, France.
5. H. L. Chang, "Advanced Nanostructured Materials Applied in Nanoelectronics" 2013 International Conference on Diamond and Carbon Materials, 2013, Riva del Garda, Italy.
6. H. L. Chang, C. C. Chen and C. T. Chang, "self –Aligned Nanotube formation for next generation transistor" 2013 International Conference on Diamond and Carbon Materials, 2013, Riva del Garda, Italy.
7. H. L. Chang, "Advanced Nanostructured Materials Research" 2013 IEEE International Interconnect Technology Conference, Kyoto Research Park, Kyoto, 2013, Japan.
8. H. L. Chang and C. T. Chang, "Improving TDDB reliability in Cu Damascene by Modulating ESL structure", 2012 IEEE International Interconnect Technology Conference, 2012, San Jose, USA.
1. H.L. Chang, "Controllable Carbon Based Nanostructured Materials Applied in Nanoelectronics", Graphene & 2D Materials 2015 International Conference & Exhibition Montreal (Canada) 2015, Oct 14-16.
2. H. L. Chang and C. T. Chang. "Self-aligned carbon nanotube formation for CMOS applications ", 2015 International Conference on Diamond and Carbon Materials 6-10 Sep, Bad Homburg, Germany.
3. H. L. Chang as Keynote Speaker, " Exploring the Mechanical and Physical Properties of Si and SiGe Materials : An Advanced Fundamental Study", 2015 ICMSE July 17-19, Qingdao, China.
4. H. L. Chang, C. T. Chang and C. T. Kuo, "Nanostructured Material Formation for Beyond Si Devices", 2015 IEEE International Interconnect Technology Conference 2015, May18-21, Grenoble, France.
5. H. L. Chang, "Advanced Nanostructured Materials Applied in Nanoelectronics" 2013 International Conference on Diamond and Carbon Materials, 2013, Riva del Garda, Italy.
6. H. L. Chang, C. C. Chen and C. T. Chang, "self –Aligned Nanotube formation for next generation transistor" 2013 International Conference on Diamond and Carbon Materials, 2013, Riva del Garda, Italy.
7. H. L. Chang, "Advanced Nanostructured Materials Research" 2013 IEEE International Interconnect Technology Conference, Kyoto Research Park, Kyoto, 2013, Japan.
8. H. L. Chang and C. T. Chang, "Improving TDDB reliability in Cu Damascene by Modulating ESL structure", 2012 IEEE International Interconnect Technology Conference, 2012, San Jose, USA.
Recent Journal papers in 5 years
H. L. Chang, C. T. Chang and C. T. Kuo,
"Synthesis and Characterization of Silicon and Nitrogen Containing Carbon-Based Crystals and Their Nanostructured Materials"
ECS J. Solid State Sci. Technol.2014 volume 3, issue 10, M65-M70,
http://jss.ecsdl.org/content/3/10/M65.full
H. L. Chang, C. T. Chang and C. T. Kuo “Study of conduction modes of time to dielectric breakdown reliability in Cu damascene structures ”, ECS, J. Solid State Sci. Technol.2014, 2(11) (2013) N217.
http://jss.ecsdl.org/content/2/11/N217.abstract、
H. L. Chang, C. T. Kuo and M.S. Liang “Mechanical properties and fracture toughness of porous SiCOH low-k dielectrics”, Microelectronic Engineering, 88(7) (2011) 1623.
http://ir.lib.nctu.edu.tw/handle/987654321/42843
H. L. Chang and M. S. Laing “Oxygen vacancy estimation of high k metal gate using thermal dynamic models”, Appl. Phys. Lett. 97 (2010) 041912.
http://scitation.aip.org/content/aip/journal/apl/97/4/10.1063/1.3473772
H. L. Chang and C. T. Kuo, “Multi-walled carbon nanotubes growing vertically from root particles”, Jpn. J. Appl. Phys 49 (2010) 045002
http://iopscience.iop.org/1347-4065/49/4R/045101?rel=ref&relno=9
H. L. Chang and C. T. Kuo, “Formation of bamboo-like carbon nanotubes and nanofibers using Co-Si-O and Co-Si catalysts”, Jpn. J. Appl. Phys (2010) 045101
http://iopscience.iop.org/1347-4065/49/4R/045002?rel=ref&relno=2
"Synthesis and Characterization of Silicon and Nitrogen Containing Carbon-Based Crystals and Their Nanostructured Materials"
ECS J. Solid State Sci. Technol.2014 volume 3, issue 10, M65-M70,
http://jss.ecsdl.org/content/3/10/M65.full
H. L. Chang, C. T. Chang and C. T. Kuo “Study of conduction modes of time to dielectric breakdown reliability in Cu damascene structures ”, ECS, J. Solid State Sci. Technol.2014, 2(11) (2013) N217.
http://jss.ecsdl.org/content/2/11/N217.abstract、
H. L. Chang, C. T. Kuo and M.S. Liang “Mechanical properties and fracture toughness of porous SiCOH low-k dielectrics”, Microelectronic Engineering, 88(7) (2011) 1623.
http://ir.lib.nctu.edu.tw/handle/987654321/42843
H. L. Chang and M. S. Laing “Oxygen vacancy estimation of high k metal gate using thermal dynamic models”, Appl. Phys. Lett. 97 (2010) 041912.
http://scitation.aip.org/content/aip/journal/apl/97/4/10.1063/1.3473772
H. L. Chang and C. T. Kuo, “Multi-walled carbon nanotubes growing vertically from root particles”, Jpn. J. Appl. Phys 49 (2010) 045002
http://iopscience.iop.org/1347-4065/49/4R/045101?rel=ref&relno=9
H. L. Chang and C. T. Kuo, “Formation of bamboo-like carbon nanotubes and nanofibers using Co-Si-O and Co-Si catalysts”, Jpn. J. Appl. Phys (2010) 045101
http://iopscience.iop.org/1347-4065/49/4R/045002?rel=ref&relno=2
Recent patents in 5 years
20110027991
Interconnect Structure for Semiconductor Devices
http://www.faqs.org/patents/app/20110027991
20100295173
Composite Underfill and Semiconductor Package
http://www.faqs.org/patents/app/20100295173
20100090343
Interconnect Structure for Semiconductor Devices
http://www.faqs.org/patents/app/20100090343
20100090342
Metal Line Formation Through Silicon/Germanium Soaking
http://www.faqs.org/patents/app/20100090342
201000598930
Synergy Effect of Alloying Materials in Interconnect Structures
http://www.faqs.org/patents/app/20100059893
20090275195
Interconnect Structure Having a Silicide/Germanide Cap Layer
http://www.faqs.org/patents/app/20090275195
200901522722
Synergy Effect of Alloying Materials in Interconnect Structures
http://www.faqs.org/patents/app/20090152722
20080251928
Carbonization of metal caps
http://www.faqs.org/patents/app/20080251928
Interconnect Structure for Semiconductor Devices
http://www.faqs.org/patents/app/20110027991
20100295173
Composite Underfill and Semiconductor Package
http://www.faqs.org/patents/app/20100295173
20100090343
Interconnect Structure for Semiconductor Devices
http://www.faqs.org/patents/app/20100090343
20100090342
Metal Line Formation Through Silicon/Germanium Soaking
http://www.faqs.org/patents/app/20100090342
201000598930
Synergy Effect of Alloying Materials in Interconnect Structures
http://www.faqs.org/patents/app/20100059893
20090275195
Interconnect Structure Having a Silicide/Germanide Cap Layer
http://www.faqs.org/patents/app/20090275195
200901522722
Synergy Effect of Alloying Materials in Interconnect Structures
http://www.faqs.org/patents/app/20090152722
20080251928
Carbonization of metal caps
http://www.faqs.org/patents/app/20080251928
Try not to become a man of success, but rather try to become a man of value -Albert Einstein